Passive InP regenerator integrated on SOI for the support of broadband silicon modulators.

Passive signal regeneration based on the Membrane InP Switch (MIPS) is demonstrated. Because of the high confinement of light in the active region of the MIPS, the device acts as a saturable absorber with a highly non-linear response. Using this effect, the extinction ratio (ER) of low-ER signals can be tripled and a receiver sensitivity enhancement of 4.5dB is demonstrated using an input signal at 1Gb/s with an ER of 2dB. Regenerator operation up to 5Gb/s is demonstrated and using a device simulator a strategy to reach higher bitrate operation is proposed.